A 70°phase margin OPAMP with positive feedback in flexible a-IGZO TFT technology
2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)(2015)
摘要
This paper presents a fully integrated operational amplifier (OPAMP) with positive feedback fabricated in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) technology. The OPAMP is implemented by using a 5 µm nMOS a-IGZO TFT process, and is operated from a dc supply voltage of 6 V. The circuit relies on positive feedback in the input differential pair to improve gain. The measured open-loop gain is 19 dB over a 3 dB bandwidth of 25 kHz with 70° PM (phase margin). The measured unity-gain frequency, output swing voltage, and dc power consumption are 330 kHz, 3.7 V
pp
, and 6.78 mW, respectively. The total chip area of the proposed OPAMP is 4.2×6 mm
2
. To the best of our knowledge the proposed amplifier has the highest PM among OPAMPs in TFT technology.
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关键词
integrated operational amplifier,phase margin OPAMP,amorphous indium gallium zinc oxide thin film transistor technology,a-IGZO TFT technology,nMOS a-IGZO TFT process,differential pair,unity gain frequency,output swing voltage,DC power consumption,size 5 mum,voltage 6 V,gain 19 dB,bandwidth 25 kHz,frequency 330 kHz,voltage 3.7 V,power 6.78 mW,size 4.2 mm,size 6 mm,InGaZnO
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