Semiconductor optical amplifier (SOA) packaging for scalable and gain-integrated silicon photonic switching platforms

Electronic Components and Technology Conference(2015)

引用 33|浏览48
暂无评分
摘要
We report on the design, fabrication, packaging and characterization of a 4-channel semiconductor optical amplifier (SOA) flip-chip mounted on a photonic carrier. Significant loss occurs across high radix silicon photonic switching platforms due to multiple switching stages, waveguide crossings and I/O coupling elements. To overcome these losses, we propose the hybrid integration of a III-V SOA onto a photonic switch carrier to realize a gain neutral switch. Custom four channel cleaved facet SOA variants were designed with unique mounting structures for precise vertical alignment. A photonic carrier test site was designed with unique SiN waveguide coupling structures, vertical reference stops, a trench with metal lines and AuSn solder bumps for device bonding. Individual SOAs were attached to photonic carriers using a precision flip-chip bonder. All assemblies exhibited good bond strength and no line-line shorts were observed. The SOA and assembled test sites were characterized in the 1.5-1.6 mu m wavelength range. A net SOA/photonic carrier optical gain of greater than 10 dB was observed.
更多
查看译文
关键词
semiconductor optical amplifier,III-V SOA packaging,gain-integrated silicon photonic switching platform,flip-chip bonder,photonic switch carrier,radix silicon photonic switching platform,multiple switching stage,waveguide crossing,I/O coupling element,hybrid integration,gain neutral switch,photonic carrier test site,waveguide coupling structure,solder bump,device bonding,wavelength 1.5 mum to 1.6 mum,SiN,AuSn
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要