Hvcmos Pixel Sensors

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland) and are considered as an option for ATLAS strip and pixel layers (LHC/CERN) and CLIC (CERN). The Mu3e detector will be 50 micrometers thin detector with an area of 2 square meters. For CLIC a capacitively coupled hybrid pixel detector is proposed, where the capacitive signal transmission is used for the readout of sensor signals. For ATLAS there are several detector options including hybrid and monolithic sensors the total area of the sensor will be nearly 100 square meters.