High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

Chun-Yuan Hsueh,Chieh-Hung Yang,Si-Chen Lee

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010（2021）

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摘要

The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm 2 /V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

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chemical vapor deposition

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