Ge-On-Si Bufferless Epitaxial Growth For Photonic Devices

Rodolfo Camacho-Aguilera,Yan Cai,Lionel C. Kimerling,Jurgen Michel

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES（2012）

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摘要

Ge-on-Si bufferless growth is demonstrated. Phosphorus appears to act as a surfactant and promotes epitaxial growth of Ge-on-Si on oxide windows below 1.2 mu m. PL intensity shows its potential use for Ge light emitters. Mixed concentrations of Boron and Phosphorus perform better for surfactant and stress relaxation, leading to single crystallinity even in widths above 50 mu m.

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