GaP ring-like nanostructures on GaAs (100) with In0.15Ga0.85Ascompensation layers

We present the fabrication of GaP ring-like nanostructures on GaAs ( 100) substrates with inserted In0.15Ga0.85As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In0.15Ga0.85As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In0.15Ga0.85As layer thickness.