Investigation Of Extra Traps Measured By Charge Pumping Technique In High Voltage Zone In P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With Hfo2/Metal Gate Stacks

This letter investigates extra traps measured by charge pumping technique in the high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks. N-V-high level characteristic curves with different duty ratios show that the hole discharge time (t(base level)) dominates the value of extra traps. By fitting ln (N (t(base level) = 1 mu s) -N (t(base level))) - Delta t(base level) at different temperatures and computing the equation t = tau(0) exp (alpha(h,SiO2)d(SiO2) + alpha(h,HfO2)d(HfO2,trap)), the results show that these extra traps measured by the charge pumping technique at high voltage zone can be attributed to high-k bulk shallow traps. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773914]