Formation Of Gap Nanostructures On Gaas (100) By Droplet Molecular Beam Epitaxy

In this contribution, we have demonstrated the fabrication of tensile strained GaP nanostructures on GaAs (100) substrates by droplet epitaxy using molecular beam epitaxy. The GaP nanostructures are ring-like structure due to crystallization with low P-2 pressure. The density of GaP ring-like nanostructures varies between 8.92x10(8)-2.17x10(9) cm(-2) and the average of diameter varies between 88.4-133 nm with increasing the Ga amount deposition in the range of 2.4-4.8 ML. The photoluminescence result shows the tensile strain-modified band gap effect of GaP nanostructure in GaAs matrix and it also confirms the high-quality of GaP nanocrystal. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim