Engineered substrates for future More Moore and More than Moore integrated devices

Laurent Clavelier,C Deguet,L Di Cioccio,E Augendre, A Brugere,Pierric Gueguen,Y Le Tiec,Hubert Moriceau, M Rabarot,Thomas Signamarcheix,J Widiez,O Faynot,F Andrieu,O Weber,C Le Royer,P Batude,L Hutin,Jf Damlencourt,S Deleonibus,Emmanuel Defay

Electron Devices Meeting（2010）

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摘要

In 1991, M. Bruel (1) invented and patented the Smart Cut technology to fabricate Silicon On Insulator (SOI) substrates. The process relies on the transfer of a high quality single crystal layer from one wafer to another: implantation of gaseous ions in a single crystal wafer, direct bonding on a stiffener and splitting (Fig 1). The invention of this SOI process combined with the entrepreneurship of SOITEC paved the way to high quality SOI substrates mass production. Today, SOI is a mature product (up to 300mm diameter) and now developments are focused on the integration of new materials and functionalities in order to improve device performances and enlarge the application spectrum.

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关键词

mosfet,bonding processes,ion implantation,semiconductor device manufacture,silicon-on-insulator,substrates,moore integrated devices,soi process,soi substrates mass production,soitec,si,device performances,direct bonding,engineered substrates,entrepreneurship,gaseous ion implantation,high quality single crystal layer,silicon on insulator substrates,single crystal wafer,smart cut technology,splitting,stiffener,spectrum,single crystal,silicon,silicon on insulator,mass production,copper

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