Theoretical analysis of bulk Ge-on-Si laser performance

Yan Cai,Zhaohong Han,Wei Yu,Rodolfo Camachoaguilera,Lionel C Kimerling,Jurgen Michel

Group IV Photonics（2013）

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摘要

A modified gain modeling shows Ge has a wide gain bandwidth from 1550 nm to 1770 nm. Optimized laser structure predicts that Ge laser can achieve a lasing threshold of 2.2 kA/cm2.

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关键词

elemental semiconductors,germanium,laser beams,laser theory,semiconductor lasers,silicon,ge-si,bulk ge-on-si laser performance,gain bandwidth,gain modeling,lasing threshold,optimized laser structure,wavelength 1550 nm to 1770 nm

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