A novel distributed amplifier with high gain, low noise and high output power in 0.18-µm CMOS technology
Microwave Symposium Digest（2011）
摘要
A new distributed amplifier (DA) topology is proposed. This topology is the combination of the conventional distributed amplifier (CDA) and the cascaded single-stage distributed amplifier (CSSDA), which makes wideband amplifier by considering the gain, noise figure and output power simultaneously. From the measurements, the DA has a small signal gain of 20.5 dB, a 3-dB bandwidth of 35 GHz, and a gain-bandwidth product of 371 GHz. The maximum OP1dB is 8.6 dBm and the noise figure is between 6.8 and 8 dB at frequency lower than 18 GHz. The chip size including testing pads is only 0.78 mm2, and the ratio of the gain-bandwidth to chip size achieves 476 GHz/mm2. To authors' knowledge, the circuit has the highest ratio of gain-bandwidth product to chip area and the highest figure of merit (FOM) in 0.18-μm CMOS, and it has a comparable performance with other DAs in advanced processes.
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关键词
cmos integrated circuits,distributed amplifiers,field effect mimic,low noise amplifiers,millimetre wave amplifiers,wideband amplifiers,cmos technology,bandwidth 35 ghz,cascaded single-stage distributed amplifier,distributed amplifier topology,gain 20.5 db,gain-bandwidth product,low noise,noise figure 6.8 db to 8 db,size 0.18 mum,wideband amplifier,cmos distributed amplifier,scattering parameters,gain bandwidth product,indexes,noise measurement,gain
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