Single Die Multiple 600 V Power Diodes With Deep Trench Terminations and Isolation

Power Electronics, IEEE Transactions(2011)

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摘要
This paper presents a new concept for low cost and high reliability monolithic integration of vertical power devices. The concept relies on the creation of deep trench terminations on the edge of the device, thus allowing to avoid 3 D peak surface electric field levels whereas complete insulation of the integrated power devices sharing the same backside contact electrode is guaranteed. Simulation results show that the stress of the electric field can be further reduced by introducing an angle on the trench termination walls. Power diodes in the range of 600 V with 87° wall angles of the 100-μm deep trench terminations are fabricated to demonstrate the feasibility and the effectiveness of the concept. The multidiode devices were experimentally tested under static and dynamic practical conditions. The fabricated prototypes fulfilled the initial design electrical specifications considering the breakdown voltage rating and demonstrated an excellent functional behavior. The implementation of the multidiode device into an interleaved converter is presented in this paper.
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关键词
isolation technology,power convertors,power semiconductor devices,semiconductor diodes,backside contact electrode,deep trench termination,high reliability monolithic integration,integrated power device,interleaved converter,single die multiple power diode,size 100 mum,surface electric field,trench isolation,voltage 600 v,monolithic integrated circuits,power semiconductor diodes,switching converters,wafer scale integration,electric field,silicon,metals,breakdown voltage,dielectric materials,electric fields
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