A 40nm 7Gb/s/pin single-ended transceiver with jitter and ISI reduction techniques for high-speed DRAM interface

VLSI Circuits(2010)

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摘要
A 7Gb/s single ended transceiver with low jitter and ISI is implemented in 40 nm DRAM process. DRAM optimized LC PLL achieves inductor Q of 3.86 and results in random jitter of 670 fs RMS. A clock tree regulator with closed loop replica path reduces low as well as high frequency noise. RX 2-tap hybrid DFE combining sampling and integration methods reduces power and area by 37% and 24%, compared to the integrating DFE. Moreover, on-chip de-emphasis circuit in TX multiplexer reduces ISI of both on and off chip.
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关键词
dram chips,clocks,intersymbol interference,jitter,phase locked loops,transceivers,isi reduction techniques,lc pll,q-inductor,rx 2-tap hybrid dfe,tx multiplexer,bit rate 7 gbit/s,clock tree regulator,closed loop replica path,high frequency noise,high-speed dram interface,integration methods,on-chip de-emphasis circuit,sampling method,single-ended transceiver,size 40 nm,high frequency,noise,chip,system on a chip
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