Etching Of Monocrystalline Cuinse(2) Samples

In the fabrication of CIS and CIGS cells, the absorber layers are often etched in a KCN solution prior to the deposition of buffered and window layers. It is possible that cell performance may be improved further by removing a thin surface absorber layer after the KCN etching. In the present project, the variation of etching rate with different etching solution concentrations applied to the bulk CuInSe(2) samples is being studied.