A fully-integrated efficient CMOS inverse Class-D power amplifier for digital polar transmitters

Debopriyo Chowdhury,Siva V. Thyagarajan,Lu Ye,Elad Alon,Ali M. Niknejad

Radio Frequency Integrated Circuits Symposium（2012）

引用 105|浏览18

暂无评分

摘要

We demonstrate a fully-integrated, high-efficiency inverse Class-D power amplifier in 65nm CMOS process. Such efficient switching amplifiers can form the core of digital polar transmitters. A comprehensive analytical framework has been developed to reveal the design trade-offs and enable efficiency maximization. Operating from a 1-V supply, the PA delivers 22dBm output power with a high efficiency of 44% without using any RF process options. The PA efficiency is comparable to that of state-of-the-art CMOS switching PAs, though it uses a much simpler output matching network. The PA has been integrated into a mixed-signal polar transmitter and meets the 802.11g (54Mbps 64QAM OFDM) spectral mask and EVM requirements with more than 18% average efficiency.

查看译文

关键词

cmos analogue integrated circuits,predistortion,cmos switching pa,mixed-signal polar transmitter,mixed analog–digital integrated circuits,size 65 nm,power amplifiers,high-efficiency cmos inverse class-d pa,fully-integrated efficient cmos inverse class-d power amplifier,rf process,transmitters,evm requirement,digital polar transmitters,transformers,cmos integrated circuits,switching amplifiers,voltage 1 v,efficiency 44 percent,cmos inverse class-d power amplifier,802.11g spectral mask,mixed-signal polar transmitters,switching circuits,ofdm,switches,transistors,harmonic analysis,power amplifier,power generation,capacitance

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要