RF CMOS for microwave and mm-wave applications

Basanth Jagannathan,Robert A Groves, David Goren,Brian A Floyd,David R Greenberg,L F Wagner,S M Csutak,Sungjae Lee,D Coolbaugh,John J Pekarik

San Diego, CA（2006）

引用 16|浏览66

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摘要

RF CMOS is gaining significant momentum as the technology of choice for implementing product designs in the 1-10GHz band. With scaling pushing fT and fMAX of FET's beyond 300GHz and integration of back-end-of-line (BEOL) conducive to low-loss passives, CMOS is poised to address application needs in the X, K and V bands

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关键词

cmos integrated circuits,mimic,mmic,radiofrequency integrated circuits,1 to 10 ghz,rf cmos,back-of-end-line wiring,field emission transistors,microwave application,millimeter wave application,product design

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