Nanotube memories for space applications

M N Lovellette,A B Campbell,H L Hughes,R K Lawerence,Jonathan W Ward,Mitchell Meinhold,Thomas R Bengtson, G F Carleton, Brent M Segal,Thomas Rueckes

Aerospace Conference, 2004. Proceedings. 2004 IEEE（2004）

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摘要

The radiation hardness characteristics of nano-electromechanical single-walled carbon nanotube (SWNT) memory elements has been studied. The NRAM bits have been exposed to 100 krad, 1 Mrad and 10 Mrad of gamma-radiation. Initial test results indicate that NRAM is an extremely radiation hard memory.

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关键词

carbon nanotubes,gamma-ray effects,nanotube devices,radiation hardening (electronics),random-access storage,space vehicle electronics,c,swnt,gamma radiation effect,nanoelectromechanical elements,nanotube ram technology,nanotube memory devices,radiation hard memory,single walled carbon nanotube memory elements,space applications,capacitors,radiation hardening,testing,cmos technology,radiation hardness,nonvolatile memory,electrodes,gamma radiation,chemical elements

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