A highly integrated quad band low EVM polar modulation transmitter for GSM/EDGE applications

Aristotele Hadjichristos,Joel Walukas,Nikolaus Klemmer,Wen Suter,Scott R Justice,Satish Uppathil, Gary W Scott

CICC（2004）

引用 13|浏览12

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摘要

A polar modulation transmitter, fabricated in BiCMOS technology, is presented. It uses an offset loop transmitter to achieve both GSM and EDGE phase modulation. For the 8PSK modulation, the amplitude information is reconstructed through the use of a saturated GSM power amplifier with collector voltage modulation. This solution does not require the use of SAW filters and RF isolators and maintains excellent EVM and good ACPR over a wide range of VSWR. This transmitter is part of a quad band GSM/EDGE highly integrated transceiver.

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关键词

3g mobile communication,bicmos integrated circuits,uhf power amplifiers,cellular radio,phase modulation,radio transmitters,0.25 micron,8psk modulation,acpr,bicmos,edge phase modulation,gsm power amplifier,collector voltage modulation,integrated transceiver,low evm polar modulation transmitter,offset loop transmitter,quad band transmitter,third generation cellular radios,power amplifier,voltage amplifier,amplitude modulation,integrated circuit,standing wave ratio,transceiver

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