Very fast CMOS glitch detector

Electronics Letters （1993）

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摘要

A very fast CMOS glitch detector is presented which has been designed to perform measurements on crosstalk between metal lines directly on silicon dies. The theoretical detection capability is better than 200 mV for 60 ps glitches. A prototype has been implemented and successfully tested.

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关键词

CMOS integrated circuits,crosstalk,integrated circuit testing,transient response,200 mV,60 ps,CMOS glitch detector,Si dies,crosstalk,detection capability,metal lines

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