Smart co-integration of light sensitive layers with FDSOI transistors for More than Moore applications

Laurent Grenouillet,B De Salvo,L Brunet,J Coignus,C Tabone,J Mazurier,C Le Royer,P Grosse,M A Jaud, P Rivallin, Z Chalupa,O Rozeau, O Faynot,Maud Vinet

SOI-3D-Subthreshold Microelectronics Technology Unified Conference（2014）

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摘要

We demonstrate for the first time that FDSOI technology can be turned into an integrated light-sensitive device technology capable of detecting or interacting with light. By designing a dedicated diode below the BOX, light absorption induced VT shifts as large as 100mV and saturation drain current modulation of 70% are measured for the transistors above the BOX. Those experimental results are supported by TCAD simulations and pave the way to More than Moore applications for FDSOI technology.

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关键词

integrated optoelectronics,silicon-on-insulator,box,fdsoi transistor,more than moore application,tcad simulation,buried oxide,fully depleted silicon-on-insulator technology,integrated light-sensitive device technology,light absorption,light sensitive layer,saturation drain current modulation,smart cointegration,voltage shift

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