A process-technology-scaling-tolerant pipelined ADC architecture achieving 6-bit and 4 GS/s ADC in 45nm CMOS

Silicon Monolithic Integrated Circuits in Rf Systems(2014)

引用 0|浏览6
暂无评分
摘要
A process-technology-scaling-tolerant pipelined ADC architecture has been demonstrated achieving 4 GS/s and 6-bit resolution in 45nm SOI CMOS. It utilizes open-loop, op-amp-less residue amplifier stages employing background master-slave gain calibration in order to achieve 4 GS/s clock rates while maintaining compatibility with deeply scaled CMOS processes. The pipelined ADC consumes 38 mW of power from a 1.4 V supply while operating at 4 GS/s and occupies a core area of only 0.04 mm2 due to its use of compact open-loop residue amplifiers. The measured DNL and INL are -0.8/1.0 LSB and -1.0/0.9 LSB, respectively. The ADC SNDR at 4 GS/s is 31.6 dB with a 250 MHz input and 27.3 dB with a 1.8 GHz input.
更多
查看译文
关键词
cmos integrated circuits,amplifiers,analogue-digital conversion,calibration,silicon-on-insulator,adc sndr,dnl,inl,soi cmos,background master-slave gain calibration,frequency 1.8 ghz,frequency 250 mhz,open-loop op-amp-less residue amplifier stages,power 38 mw,process-technology-scaling-tolerant pipelined adc architecture,size 45 nm,voltage 1.4 v,word length 6 bit,analog-to-digital converter,open-loop,pipelined adc,pipelines,gain,master slave
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要