High-power in-phase coherently coupled VCSEL array based on proton implantation

Electronics Letters  (2014)

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摘要
Three-element in-phase coherently coupled arrays of vertical cavity surface-emitting lasers (VCSELs) were fabricated using proton implantation. The arrays show excellent beam quality with a far-field divergence of 4°, while maintaining a stable in-phase mode until a maximum output power of 4 mW under continuous-wave condition. The process for the arrays is simple and the cost is low.
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关键词
iii-v semiconductors,aluminium compounds,gallium arsenide,laser beams,laser cavity resonators,laser modes,optical fabrication,quantum well lasers,semiconductor laser arrays,semiconductor quantum wells,surface emitting lasers,gaas-al0.3ga0.7as,gaas-al0.3ga0.7as quantum wells,beam quality,continuous-wave conditions,far-field divergence,high-power in-phase coherently coupled vcsel array,output power,power 4 mw,proton implantation,stable in-phase mode,three-element in-phase coherently coupled arrays,vertical cavity surface emitting lasers
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