High performance transmit/receive modules in 0.13 µm SiGe:C BiCMOS for short range F-band MIMO radars

Microwave Symposium(2014)

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摘要
Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with fT/fmax of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120-140 GHz and providing differential output power of up to 6 dBm, the highest values reported to date for BiCMOS. The RX uses the identical frequency octupler followed by a mixer, transformer and a differential LNA, giving altogether conversion gain of 25 dB. Both chips are packaged and connected to off-chip patch antennas using bondwire interconnects with dedicated compensation structures. Initial measurement trials proved full functionality of the realized frontend across 114-152 GHz. It has also been demonstrated that wire-bonding, when properly designed, is still an attractive solution for chip to antenna interconnects even above 110 GHz.
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bicmos analogue integrated circuits,ge-si alloys,mimo radar,carbon,millimetre wave radar,modules,radar receivers,radar transmitters,bicmos,f-band radar modules,gilbert cell cascade,sige:c,tx-rx,bondwire interconnect,compensation structure,conversion gain,differential lna,differential output power,frequency 120 ghz to 140 ghz,frequency 300 ghz,frequency 500 ghz,frequency octupler,gain 25 db,heterojunction bipolar transistor,high performance transmit-receive module,high-speed hbt,low noise amplifier,off-chip patch antenna,short range f-band mimo radar,size 0.13 mum,wire-bonding,fmcw,gilbert cell,hbt,mimo,frequency multipliers,patch antennas,radar
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