Sub-20 nm design technology co-optimization for standard cell logic

Computer-Aided Design(2014)

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摘要
Efficiency and manufacturability of standard cell logic is critical for an IC, as standard cells are at the heart of the nexus between technology definition, circuit design and physical synthesis. Conventional standard cell design techniques are increasingly ineffective as we scale to patterning restricted sub-20 nm CMOS nodes. To meet the constraints and leverage the features of future technology offerings, we propose a holistic design technology co-optimization (DTCO) for standard cell logic. In our holistic DTCO we co-optimize the standard cell architecture to balance manufacturability and efficiency at the cell level while taking into account block level considerations such as pin accessibility and power rail robustness. Our DTCO in a foundry 14 nm CMOS resulted in two standard cell architectures, namely, 10T_BiDir and 10T_UniDir. We evaluated these cell libraries with physically synthesized blocks and ring oscillator test structures in IBM 14SOI process. We observed that 10T_BiDir emerges as the preferred alternative at 14 nm CMOS, with 10T_UniDir promising better scalability to future nodes.
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关键词
circuit optimisation,integrated circuit design,integrated logic circuits,10T_BiDir,10T_UniDir,CMOS nodes,DTCO,IBM 14SOI process,design technology cooptimization,pin accessibility,power rail robustness,ring oscillator,size 14 nm,standard cell logic,14 nm CMOS,Design Technology Co-Optimization,FinFET device,Multiple patterning,Standard cell logic
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