Analysis On In-Band Distortion Caused By Switching Amplifiers

Wonhoon Jang,Nelson Silva,Arnaldo Oliveira, Nuno Borges Carvalho

Microwaves, Antennas & Propagation, IET （2014）

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摘要

A hypothetical model is built to explain an in-band distortion mechanism of the class F amplifier. Using the model it is analytically proved that static non-linearities of switching amplifiers do not cause meaningful in-band distortion when the amplifiers are driven by ideal 1-bit digital RF signals. It is also found that short-term memory effects significantly contribute to in-band distortion. The analysis and the mechanism are tested and supported by MATLAB simulations. A system composed of a field-programmable gate array and a class F amplifier has been built and the in-band distortion mechanism is verified by measurement.

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关键词

amplifiers,distortion,field programmable gate arrays,switching circuits,matlab simulations,class f amplifier,field-programmable gate array,ideal 1-bit digital rf signals,in-band distortion analysis,short-term memory,switching amplifiers,field programmable gate array,short term memory

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