Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters

Luisa Petti,F Bottacchi,Niko Munzenrieder,Hendrik Faber,Giuseppe Cantarella,Christian Vogt,Lars Buthe,Imge Namal,Florian Spath,T Hertel,Thomas D Anthopoulos,Gerhard Troster

Electron Devices Meeting（2014）

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摘要

We report the integration of solution-processed high-purity semiconducting (7,5) single walled carbon nanotubes (SWCNTs) with metal oxides for the fabrication of high-performance CMOS inverters on free-standing plastic foils. Flexible inverters based on spin-coated SWCNTs and sputtered amorphous InGaZnO (IGZO) exhibit gains up to 85 V/V, even while bent to a tensile radius of 1 cm. To our knowledge, this is the highest gain ever reported for flexible and strained hybrid inverters, supplied at VDD≤10 V. We also realize flexible inverters based on fully solution-deposited SWCNTs and InOx semiconductors.

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关键词

cmos integrated circuits,amorphous semiconductors,gallium compounds,indium compounds,invertors,single-wall carbon nanotubes,spin coating,spray coatings,sputtered coatings,zinc compounds,ingazno,flexible and strained hybrid inverters,flexible complementary inverters,free-standing plastic foils,fully solution-deposited swcnts,high-performance cmos inverter fabrication,single walled carbon nanotubes,solution-processed high-purity semiconducting integration,spin-coated swcnts,sputtered amorphous spray-coated metal oxides,tensile radius

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