Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond

Larsake Ragnarsson,Soon Aik Chew,H F W Dekkers, Luque, M.T.,Bertrand Parvais,An De Keersgieter, K Devriendt,A Van Ammel,T Schram,Norihiro Yoshida,A V Phatak, Kwangseok Han,Benjamin Colombeau, Alice G Brand,Naoto Horiguchi,Aaron Thean

VLSI Technology（2014）

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摘要

A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ~400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.

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关键词

CMOS integrated circuits,MOSFET,atomic layer deposition,integrated circuit reliability,ion implantation,semiconductor device reliability,titanium compounds,RMG CMOS integration process,TiN-TiAl-TiN,bottom-barrier thickness control,conductive metal gate stack tuning,conformal ALD,eWF,effective work function,highly scalable bulk FinFET device,nitrogen implantation,reliability,replacement metal gate process,scalable multiVT option,size 10 nm,work function metal

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