A 28 Nm Fdsoi Integrated Reconfigurable Switched-Capacitor Based Step-Up Dc-Dc Converter With 88% Peak Efficiency

Solid-State Circuits, IEEE Journal of  (2015)

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摘要
This paper presents a fully integrated, reconfigurable switched-capacitor based step-up DC-DC converter in a 28 nm FDSOI process. Three reconfigurable step-up conversion ratios (5/2, 2/1, 3/2) have been implemented which can provide a wide range of output voltage from 1.2 V to 2.4 V with a nominal input voltage of 1 V. We propose a topology for the 5/2 mode which improves the efficiency by reducing the bottom-plate parasitic loss compared to a conventional series-parallel topology, while delivering the same amount of output power. Further, the proposed topology benefits from using core 1 V devices for all charge-transfer switches without incurring any voltage overstress. The converter can deliver load current in the range of 10 mu A to 500 mu A, achieving a peak efficiency of 88%, using only on-chip MOS and MOM capacitors for a high density implementation.
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关键词
Body biasing,bottom-plate parasitic capacitance,FDSOI,reconfigurable,step-up DC-DC converter,switched capacitor,voltage overstress limitation
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