Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

Min Shi,Jin He,Lining Zhang,Chenyue Ma,Xingye Zhou,Haijun Lou,Hao Zhuang,Ruonan Wang,Yongliang Li,Yong Ma,Wen Wu,Wenping Wang,Mansun Chan

Electron Device Letters, IEEE（2011）

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摘要

This letter describes the formation of one-time-programmable (OTP) memory using standard contact fuse and polysilicon diode in a standard CMOS technology. Programming of the contact fuse is achieved by applying a high current pulse to destroy the contact. Compared with other existing OTP technologies, the proposed approach has the advantage of zero additional mask, no additional processing step, compact structure, and low programming voltage. The described OTP has been demonstrated in a 0.18-μm CMOS technology from TSMC with a cell size of 2.33 μm2 . The contact fuse can be programmed with a voltage of 3 V and a current of 2.4 mA.

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关键词

standard cmos,standard cmos processes,contact fuse,zero-mask contact fuse,one-time-programmable memory,semiconductor diodes,one-time programmable (otp),voltage 3 v,tsmc,size 0.18 mum,polysilicon diode,masks,si,electric fuses,current 2.4 ma,otp technology,programmable circuits,electrical contacts,cmos memory circuits,memory,programming,electron devices,fuses,cmos integrated circuits

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