256x1 Element Linear Ingaas Short Wavelength Near-Infrared Detector Arrays

256x1 element linear InGaAs detector arrays assembly have been fabricated for the short wave infrared band(0.9 similar to 1.7 mu m), including the detector, CMOS readout circuits, thermoelectric cooler in a sealed package. The InGaAs detectors were achieved by mesa structure on the p-InP/i-InGaAs/n-InP double hetero-structure epitaxial material. 256x1 element linear InGaAs detectors were wire-bonded to 128x1 element odd and even ROIC, which were packaged in a dual-in-line package by parallel sealing. The characteristics of detectors and detector arrays module were investigated at the room temperature. The detector shows response peak at 1.62 mu m with 50% cutoff wavelength of 1.73 mu m and average R(0)A with 5.02K Omega.cm(2). Response non-uniformity and average peak detectivity of 256 x 1 element linear InGaAs detector arrays are 3.10% and 1.38x10(12) cmHZ(12)/W, respectively.