Simpler method to fabricate buried channel optical waveguides based on porous silicon

The oxidised porous silicon buried channel waveguides were fabricated by selectively anodized with a PMMA film mask and controlling the electric current density intensities and anodisation time during anodisation process is reported in this paper. The propagation loss of this oxidised porous silicon buried channel waveguides was measured to be 9.2dB/cm.