InP and InAs based III-V compound materials grown by gas-source molecular beam epitaxy

The growth and properties of the InAs and InP based III-V compounds grown in our laboratory by gas source molecular beam epitaxy technique (GSMBE) using the first China-made chemical beam epitaxy (CBE) system are reported. These grown materials are the lattice-matched Iny (Ga1-xAlx)1-yP (x=0-1, y��0.50), InGaP/InAlP multiple quantum wells (MQWs) on GaAs (100) substrates, the lattice-matched InP, InGaAs, InGaAs/InAlAs high electron mobility transistor (HEMT) structures, InGaAs/InP MQWs and the strained-layer In(AsP)/InP MQWs on InP (100) substrates.