Polarization enhancement of compositionally graded BaZrxTi 2-xO5 thin films prepared by sol-gel method

The compositionally up- and down-graded BaZrxTi2−xO5 (x=0, 0.01, 0.02, 0.03 and 0.04) thin films normal to Pt/Ti/SiO2/Si substrates were prepared by the sol–gel method. Their microstructure, dielectric and ferroelectric properties were investigated. The single phase compositionally graded thin films were obtained, and the upgraded thin film had better crystallization. The polarization enhancement of the compositionally graded BaZrxTi2−xO5 thin films was observed. Compared with the downgraded film, the upgraded BaZrxTi2−xO5 thin film showed better properties of dielectric constant (εr=75, at 1MHz) and remnant polarization (2Pr=0.66μC cm−2) due to the BaTi2O5 seeding layer.