Dielectric and ferroelectric properties of BaTi2O5 thin films prepared by sol-gel method

The BaTi2O5 thin films were prepared on Pt/Ti/SiO2/Si substrate by a sol–gel method. The effect of annealing temperature on microstructure, dielectric and ferroelectric properties of the BaTi2O5 thin films was investigated. The single-phase BaTi2O5 thin films were obtained, as the films were annealed at 700–850°C. At higher annealing temperature (more than 900°C), the Ba6Ti17O40 phase was formed with BaTi2O5 phase in the films. The BaTi2O5 thin film, which was annealed at 800°C, had the better electrical properties with remnant polarization (2Pr) of 2.25μC/cm2, coercive field (2Ec) of 113.4kV/cm, dielectric constant (εr) of 55 and dielectric loss (tanδ) of 0.063 (at 1MHz).