Influence of Al 3+ on the photoluminescence of Ge/Al-SiO 2 films

Different contents of Ge and Al co-doped SiO 2 films are prepared by RF magnetron sputtering technique and thermal annealing. From XPS spectra determination, we make sure the films contents and structure. Then we also determine the films PL spectra, which exhibit a V-band in around 420 nm beam and a B-band in 470 nm beam. Our experiments suggest that doped Al not improves luminescence efficiency of GeNOV and SiNOV defects centres but is of advantage to the defect centres fabrication.