Thermal stability of Mo-based Schottky contact for AlGaN∕GaN HEMT

A. Sozza,C. Dua,E. Morvan,B. Grimbert,M. A. di Forte-Poisson,S. L. Delage,E. Zanoni

Electronics Letters（2005）

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摘要

The reliability of Mo-based Schottky contact for an AlGaN/GaN HEMT after a thermal storage test is reported. Electrical and chemical analyses demonstrate the stability of Mo/Au gate for a GaN HEMT after a 2000 h ageing test at temperatures up to 340/spl deg/C.

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关键词

Schottky barriers,high electron mobility transistors,ageing,wide band gap semiconductors,thermal stability,semiconductor device reliability,molybdenum,aluminium compounds,gallium compounds,gold,III-V semiconductors,metallisation

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