A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz.

David A. Calvillo-Cortes,Mustafa Acar,Mark P. van der Heijden,Melina Apostolidou,Leo C. N. de Vreede,Domine Leenaerts,Jan Sonsky

Solid-State Circuits Conference Digest of Technical Papers（2011）

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摘要

This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.

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关键词

CMOS analogue integrated circuits,driver circuits,power amplifiers,radiofrequency amplifiers,switched mode power supplies,CMOS pulse-width-controlled driver,CMOS technology,broadband PWM-controlled RF SMPA driver,digital CMOS circuitry,frequency 3.6 GHz,high-power transistor,multiband multimode transmitter,size 65 nm,switch-mode RF PA,voltage 1.2 V,voltage 8.04 V,wireless infrastructure system

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