Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad
Nuovo Cimento Della Societa Italiana Di Fisica A-nuclei Particles and Fields(2007)
摘要
Summary We irradiated with photons from a60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the
leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always
below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not
irradiated detectors, while the backside capacitances do not change.
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关键词
surface current,current density,leakage current
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