Graded gate VDMOSFET

Shuming Xu, Kian Paau Can,Pang Dow Foo,Yi Su,Yong Liu

Electron Device Letters, IEEE（2000）

引用 14|浏览20

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摘要

In this work, we present a novel RF VDMOSFET with graded gate structure. It can be fabricated by regrowing gate oxide after gate patterning. This structure enables a very thin gate oxide to be used in the channel region; thus a much high transconductance can be obtained. At the gate edges, the gate oxide thickness increases smoothly to about three times that of the channel region. This releases the electric field crowding at the gate edge, improving the breakdown voltage from 24 V to 68 V.

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关键词

gate patterning,breakdown voltage improvement,uhf field effect transistors,68 v,350 to 1000 a,gate edge,electric field crowding,semiconductor device breakdown,graded gate vdmosfet,gate oxide regrowth,mosfet,transconductance,thin gate oxide,rf vdmosfet,channel region,degradation,breakdown voltage,capacitance,hafnium,electric field,manufacturing,low voltage,frequency,fabrication

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