Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET

Byoung Hak Hong,Young Chai Jung,Jae Sung Rieh,Sung Woo Hwang,Keun Hwi Cho,K. H. Yeo,S. D. Suk,Y. Y. Yeoh,M. Li,Dong-Won Kim,Donggun Park,Kyung Seok Oh,Won-Seong Lee

IEEE Transactions on Nanotechnology（2009）

引用 13|浏览0

暂无评分

摘要

Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.

查看译文

关键词

single acceptor,single hole tunneling,single boron atom,cylindrical shaped gate-all-around silicon nanowire pmosfet,light-hole bohr radius,temperature 4.2 k,single-acceptor atom,nanowire quantum dot,single acceptor transport,current oscillation,nanowires,p-channel mosfet,current oscillations,semiconductor quantum wires,temperature dependence,nanowire p-channel mosfet,silicon,nanowire quantum dots,strong current peak,bound-state energy spacing,si,elemental semiconductors,mosfet,gate-all-around silicon nanowire pmosfet,bound states,silicon nanowire fet (snwfet),tunnelling,single hole,electrical transport measurement,nanoelectronics,gate-all-around (gaa),charging energy,current peak,quantum dots,boron,tunneling,quantum dot,room temperature,temperature measurement,oscillations

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要