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Professor Krupanidhi’s research on multi-component ferroelectric oxides has focused on the oriented and epitaxial growth by pulsed laser ablation, sol-gel processing and magnetron sputtering. He was the first to couple the ECR plasma to physical vapor growth for low temperature epitaxy in complex oxides. Professor Krupanidhi was one of the first to integrate ferroelectric thin films on semiconductors to demonstrate ferroelectric field effect transistors which subsequently became the backbone of the development of ferroelectric random-access memories (FRAMs). Based upon his significant contributions, he also functioned as a consultant to NEC, and Matsushita in Japan and Samsung in South Korea. Currently he is focusing on the development of engineered ferroelectric nano structures for accomplishing high capacitance density for ultra-high-density memories. The critical zones in the phase diagram of the PZT compositions for enhanced pyroelectric response considering both compositional and strain fluctuations in the microscopic regions were identified for the first time. Most recently these results are further confirmed by polarization mapping via piezo force microscopy by his group.
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JOURNAL OF MATERIALS CHEMISTRY Cno. 32 (2023): 11072-11081
MATERIALS ADVANCESno. 2 (2023): 596-606
Materials advancesno. 2 (2023): 596-606
Materials for Quantum Technologyno. 1 (2023): 012002-012002
Physical Review Appliedno. 6 (2022)
MATERIALS ADVANCESno. 15 (2022): 6343-6351
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