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个人简介
Asif Khan is an Assistant Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at the Georgia Institute of Technology. He currently holds the onsemi Junior Professorship. Dr. Khan’s research focuses on microelectronic devices, specifically on ferroelectric devices that address the challenges faced by the semiconductor industry due to the end of transistor miniaturization. His research group at Georgia Tech focuses on all aspects of ferroelectricity ranging from materials physics, growth, and electron microscopy to micro-/nano-fabrication of electronic devices, all the way to ferroelectric circuits and systems for artificial intelligence, machine learning, and data-centric applications.
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论文共 166 篇作者统计合作学者相似作者
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Priyankka Gundlapudi Ravikumar,Prasanna Venkatesan Ravindran,Khandker Akif Aabrar, Taeyoung Song,Sharadindu Gopal Kirtania, Dipjyoti Das,Chinsung Park,Nashrah Afroze,Mengkun Tian,Shimeng Yu, Ahmad Ehtesham Islam,Suman Datta,
2024 IEEE International Reliability Physics Symposium (IRPS)pp.1-5, (2024)
Dipjyoti Das, Hyeonwoo Park, Zekai Wang, Chengyang Zhang,Prasanna Venkatesan Ravindran,Chinsung Park,Nashrah Afroze, Po-Kai Hsu,Mengkun Tian,Hang Chen,Winston Chern, Suhwan Lim,
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.1-3, (2024)
Matthias Passlack,Nujhat Tasneem,Chinsung Park, Prasanna Venkat Ravindran,Hang Chen,Dipjyoti Das,Shimeng Yu,Edward Chen,Jer-Fu Wang, Chih-Sheng Chang, Yu-Ming Lin,Iuliana Radu,
JOURNAL OF APPLIED PHYSICSno. 13 (2024)
Dipjyoti Das, Hyeonwoo Park, Zekai Wang, Chengyang Zhang,Prasanna Venkatesan Ravindran,Chinsung Park, Nashrah Afroze, Po-Kai Hsu,Mengkun Tian, Hang Chen,Winston Chern,Suhwan Lim,
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
IEEE Electron Device Lettersno. 10 (2023): 1628-1631
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 8 (2023): 4479-4483
VLSI Technology and Circuitspp.1-2, (2023)
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 8 (2023): 4493-4496
IEEE Transactions on Device and Materials Reliabilityno. 1 (2023): 142-146
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